Research on the Dynamic Change of Comparative Advantage of China’s Service Trade

The service trade develops quickly in China and the scale of which is increased. The main body of China’s service trade is transportation and travel. Meanwhile, the deficit in China\u27s balance of service trade is widened and China’ service trade lags behind the China’s goods trade and the service trade in some country. It’s important to assess the dynamic change of the comparative advantage of China’s service trade for improving the competitive of China’s service trade. The TC index and RCA index are used to evaluate the dynamic change of the comparative advantage of China’s service trade. The conclusions are drawn that China’s service trade in whole has comparative disadvantage, the comparative advantage of transportation is biggest in all service sectors, the comparative advantages in new services sectors such as financial service and insurance service are smaller than other service sector, the comparative advantages in transportation and travel are decreasing. Some measures should be taken to enhance the comparative advantages of China’s service trade, which consist of perfecting the rules and laws of China’s service trade, promoting science and technology innovation, opening more China’s service sectors

The Evaluation of the Regional Technology Innovation Ability Based on Grey Relational Analysis

Based on the set of an indicator system and the grey relational analysis model, the regional technology innovation ability of China is evaluated. It shows that the regional technology innovation ability of China is improving gradually; the level of technology input and the environment of technology innovation are promoting the development of the technology innovation ability of China, the level of technology output and the mechanism of the technology innovation are restricting the development of the technology innovation ability of China. In order to accelerate the regional technology innovation ability of China, some measures should be taken: the level of technology input should be increased, the level of technology output should be enhanced, the environment of technology innovation should be optimized, and the mechanism of the technology innovation should be perfected

The Mechanism and Empirical Test on the Effect of Technological Innovation on International Service Outsourcing in China

Technological innovation can promote the growth of international service outsourcing in China by advancing enterprise ability to undertake international service outsourcing, human resource quality, upgrading of international service outsourcing industry and base building of international service outsourcing. Based on the relative data from 10 areas where the international service outsourcing is developed best in China, this article builds the regression model to study the effect of technological innovation on international service outsourcing. The result indicates that technological innovation can promote obviously the development of international service outsourcing. Some suggestion should be taken to accelerate the technology innovation ability of china, such as adding the input to technological innovation, encouraging talent engaged in the international service outsourcing industry, optimizing environment of technological innovation

Growth of Thin Oxidation-Resistive Crystalline Si Nanostructures on Graphene

We report the growth of Si nanostructures, either as thin films or nanoparticles, on graphene substrates. The Si nanostructures are shown to be single crystalline, air stable and oxidation resistive, as indicated by the observation of a single crystalline Si Raman mode at around 520 cm-1, a STM image of an ordered surface structure under ambient condition, and a Schottky junction with graphite. Ultra-thin silicon regions exhibit silicene-like behavior, including a Raman mode at around 550 cm-1, a triangular lattice structure in STM that has distinctly different lattice spacing from that of either graphene or thicker Si, and metallic conductivity of up to 500 times higher than that of graphite. This work suggests a bottom-up approach to forming a Si nanostructure array on a large scale patterned graphene substrate for fabricating nanoscale Si electronic devices

A Study of Molecular Interface of Grass-Herbivory Interaction in Grass

Grass-herbivore interaction is a complex process that involves wounding effects caused by herbivore feeding, defoliation effects due to leaf-surface loss during grazing, and the deposition of herbivore saliva onto the surface of plants (Chen et al., 2009). Wounding can stimulate plant growth but clearly differs from grazing (Mattiacci et al., 1995). Defoliation affects root development in grasses and alters the carbohydrate-metabolism pathway in rice. Saliva has been found to stimulate plant growth, enhance tiller and increase biomass. However, little is known about the molecular mechanisms of plant responses to grazing in molecular level. In our previous transcriptome studies, many genes relating with grazing were identified from sheepgrass (Li et al., 2013). In last IGC report, we proposed the concept of “molecular interface on grass-herbivore interaction” (Liu et al., 2013) to understand the interaction between plant and large herbivories on molecular level, which has significant importance on agriculture and grassland conservation. This paper will present some new results in the area

Valley vortex states and degeneracy lifting via photonic higher-band excitation

We demonstrate valley-dependent vortex generation in a photonic graphene. Without breaking the inversion symmetry, excitation of two equivalent valleys leads to formation of an optical vortex upon Bragg-reflection to the third valley, with its chirality determined by the valley degree of freedom. Vortex-antivortex pairs with valley-dependent topological charge flipping are also observed and corroborated by numerical simulations. Furthermore, we develop a three-band effective Hamiltonian model to describe the dynamics of the coupled valleys, and find that the commonly used two-band model is not sufficient to explain the observed vortex degeneracy lifting. Such valley-polarized vortex states arise from high-band excitation without inversion symmetry breaking or synthetic-field-induced gap opening. Our results from a photonic setting may provide insight for the study of valley contrasting and Berry-phase mediated topological phenomena in other systems

AtKinesin-13A is located on Golgi-associated vesicle and involved in vesicle formation/budding in Arabidopsis root-cap peripheral cells

<p>Abstract</p> <p>Background</p> <p>AtKinesin-13A is an internal-motor kinesin from Arabidopsis (<it>Arabidopsis thaliana</it>). Previous immunofluorescent results showed that AtKinesin-13A localized to Golgi stacks in plant cells. However, its precise localization and biological function in Golgi apparatus is unclear.</p> <p>Results</p> <p>In this paper, immunofluorescent labeling and confocal microscopic observation revealed that AtKinesin-13A was co-localized with Golgi stacks in Arabidopsis root tip cells. Immuno-electron microscopic observations indicated that AtKinesin-13A is primarily localized on Golgi-associated vesicles in Arabidopsis root-cap cells. By T-DNA insertion, the inactivation of the <it>AtKinesin-13A </it>gene (NM-112536) resulted in a sharp decrease of size and number of Golgi vesicles in root-cap peripheral cells. At the same time, these cells were vacuolated in comparison to the corresponding cells of the wild type.</p> <p>Conclusion</p> <p>These results suggest that AtKinesin-13A decorates Golgi-associated vesicles and may be involved in regulating the formation of Golgi vesicles in the root-cap peripheral cells in Arabidopsis.</p

Observation of the Josephson effect in Pb/(Ba,K)Fe2As2 single crystal junctions

We have fabricated c-axis Josephson junctions on single crystals of (Ba,K)Fe2As2 by using Pb as the counter electrode in two geometries, planar and point contact. Junctions in both geometries show resistively shunted junction I-V curves below the Tc of the counter electrode. Microwave induced steps were observed in the I-V curves, and the critical currents are suppressed with an in-plane magnetic field in a manner consistent with the small junction limit. ICRN products of up to 0.3 mV have been observed in these junctions at 4.2 K. The observation of Josephson coupling along the c-axis between (Ba,K)Fe2As2 and a conventional superconductor suggests the existence of a s-wave superconducting order parameter in this class of iron pnictide superconductors.Comment: 16 pages and 3 figure